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Model:hn1c03fu 100927 🔎
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Descr: . Electronic Components Datasheets Active components Transistors Toshiba hn1c03fu_100927.pdf
Group:Electronics > Components > Transistors
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HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU Unit: mm For Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =-2V, IC =-4mA) Low on resistance: RON = 1 (typ.)(IB = 5mA) Absolute Maximum Ratings (Ta = 25

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